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| EMF18XV6T5 Dual Transistor - Power Management NPN/PNP Dual (Complimentary) Features http://onsemi.com * Low VCE(SAT), t0.5 V * These are Pb-Free Devices MAXIMUM RATINGS Q1 Rating Collector-Base Voltage Collector-Emitter Voltage Collector Current Q2 Rating Collector -Emitter Voltage Collector -Base Voltage Emitter -Base Voltage Collector Current - Continuous Symbol VCEO VCBO VEBO IC Value -60 -50 -6.0 -100 Unit V V V mAdc Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc (3) R1 (2) (1) Q1 R2 (4) Q2 (5) (6) 6 1 THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature Range RqJA TJ, Tstg RqJA Symbol PD Max 357 (Note 1) 2.9 (Note 1) 350 (Note 1) Max 500 (Note1) 4.0 (Note 1) 250 (Note 1) -55 to +150 Unit mW mW/C C/W SOT-563 CASE 463A PLASTIC MARKING DIAGRAM 1 Symbol PD Unit mW mW/C C/W C UV M G G UV = Specific Device Code M = Date Code G = Pb-Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Device EMF18XV6T5 EMF18XV6T5G Package SOT-563 (Pb-Free) SOT-563 (Pb-Free) Shipping 8000/Tape & Reel 8000/Tape & Reel Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR-4 @ Minimum Pad. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2005 1 October, 2005 - Rev. 1 Publication Order Number: EMF18XV6/D EMF18XV6T5 ELECTRICAL CHARACTERISTICS (TA = 25C) (Note 2) Characteristic Q1: NPN Collector-Base Cutoff Current (VCB = 50 V, IE = 0) Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) Collector-Emitter Breakdown Voltage (Note 4) (IC = 2.0 mA, IB = 0) DC Current Gain (VCE = 10 V, IC = 5.0 mA) Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) Output Voltage (on) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) Input Resistor Resistor Ratio Q2: PNP Collector-Base Breakdown Voltage (IC = -50 mAdc, IE = 0) Collector-Emitter Breakdown Voltage (IC = -1.0 mAdc, IB = 0) Emitter-Base Breakdown Voltage (IE = -50 mAdc, IE = 0) Collector-Base Cutoff Current (VCB = -30 Vdc, IE = 0) Emitter-Base Cutoff Current (VEB = -5.0 Vdc, IB = 0) Collector-Emitter Saturation Voltage (Note 4) (IC = -50 mAdc, IB = -5.0 mAdc) DC Current Gain (Note 4) (VCE = -6.0 Vdc, IC = -1.0 mAdc) Transition Frequency (VCE = -12 Vdc, IC = -2.0 mAdc, f = 30 MHz) Output Capacitance (VCB = -12 Vdc, IE = 0 Adc, f = 1.0 MHz) V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO VCE(sat) hFE fT COB -60 -50 -6.0 - - - 120 - - - - - - - - - 140 3.5 - - - -0.5 -0.5 -0.5 560 - - Vdc Vdc Vdc nA mA Vdc - MHz pF ICBO ICEO IEBO V(BR)CBO V(BR)CEO hFE VCE(sat) VOL VOH R1 R1/R2 - - - 50 50 80 - - 4.9 32.9 0.8 - - - - - 140 - - - 47 1.0 100 500 0.1 - - - 0.25 0.2 - 61.1 1.2 Vdc Vdc Vdc kW nAdc nAdc mAdc Vdc Vdc Symbol Min Typ Max Unit 3. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint. 4. Pulse Test: Pulse Width 300 ms, D.C. 2%. http://onsemi.com 2 EMF18XV6T5 TYPICAL ELECTRICAL CHARACTERISTICS -- Q1, NPN VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS 10 IC/IB = 10 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = 75C 25C -25C 1 TA = -25C 0.1 25C 75C 100 0.01 0 20 40 IC, COLLECTOR CURRENT (mA) 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 1. VCE(sat) versus IC Figure 2. DC Current Gain 1 0.8 C ob , CAPACITANCE (pF) 0.6 0.4 0.2 0 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25C 100 75C 10 1 0.1 25C TA = -25C 0.01 VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 3. Output Capacitance Figure 4. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = -25C 10 25C 75C 1 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) 50 Figure 5. Input Voltage versus Output Current http://onsemi.com 3 EMF18XV6T5 TYPICAL ELECTRICAL CHARACTERISTICS - Q2, PNP 1000 IC, COLLECTOR CURRENT (mA) TA = 25C 120 90 60 30 0 DC CURRENT GAIN TA = 75C 300 mA 250 200 150 100 IB = 50 mA 0 3 6 9 12 15 10 0.1 1 10 100 TA = - 25C TA = 25C VCE = 10 V 100 VCE, COLLECTOR VOLTAGE (V) IC, COLLECTOR CURRENT (mA) Figure 6. IC - VCE VCE , COLLECTOR-EMITTER VOLTAGE (V) 2 TA = 25C COLLECTOR VOLTAGE (mV) 1.5 900 800 700 600 500 400 300 200 100 0 0.01 0.1 1 IB, BASE CURRENT (mA) 10 100 0 0.2 0.5 1 Figure 7. DC Current Gain 1 0.5 TA = 25C VCE = 5 V 5 10 20 40 60 80 100 150 200 IC, COLLECTOR CURRENT (mA) Figure 8. Collector Saturation Region 13 Cib, INPUT CAPACITANCE (pF) 12 11 10 9 8 7 6 0 1 2 VEB (V) 3 4 C ob, CAPACITANCE (pF) 14 12 10 8 6 4 2 0 0 10 Figure 9. On Voltage 20 VCB (V) 30 40 Figure 10. Capacitance Figure 11. Capacitance http://onsemi.com 4 EMF18XV6T5 PACKAGE DIMENSIONS SOT-563, 6 LEAD CASE 463A-01 ISSUE F D -X- A L 4 6 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. MILLIMETERS MIN NOM MAX 0.50 0.55 0.60 0.17 0.22 0.27 0.08 0.12 0.18 1.50 1.60 1.70 1.10 1.20 1.30 0.5 BSC 0.10 0.20 0.30 1.50 1.60 1.70 INCHES NOM MAX 0.021 0.023 0.009 0.011 0.005 0.007 0.062 0.066 0.047 0.051 0.02 BSC 0.004 0.008 0.012 0.059 0.062 0.066 MIN 0.020 0.007 0.003 0.059 0.043 1 2 3 E -Y- HE DIM A b C D E e L HE b e 5 6 PL M C XY 0.08 (0.003) SOLDERING FOOTPRINT* 0.3 0.0118 0.45 0.0177 1.0 0.0394 1.35 0.0531 0.5 0.5 0.0197 0.0197 SCALE 20:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 5 EMF18XV6/D |
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